IRF6612中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6612規(guī)格書詳情
Description
The IRF6612 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6612
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
只做原裝 |
21+ |
DIRECTFET |
36520 |
一級代理/放心采購 |
詢價 | ||
IR |
2102+ |
QFN |
6854 |
只做原廠原裝正品假一賠十! |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MX |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
23+ |
QFN |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
IR |
11+ |
QFN |
14400 |
普通 |
詢價 | ||
IOR |
23+ |
QFN56 |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
IR |
2022 |
QFN56 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
SMD |
6000 |
原裝現(xiàn)貨,長期供應,終端可賬期 |
詢價 | |||
IR |
21+ |
DIRECTFET |
5000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗 |
詢價 | ||
IR |
22+ |
DIRECTFET |
32350 |
原裝正品 假一罰十 公司現(xiàn)貨 |
詢價 |
