IRF6609中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
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Description
The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Low Conduction Losses
? Low Switching Losses
? Ideal Synchronous Rectifier MOSFET
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6609
- 功能描述：
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
DIRECTFET |
9000 |
原裝正品 |
詢價 | ||
IR |
23+ |
QFN |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
IR |
2016+ |
DIRECTFET |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
1923+ |
DIRECTFET |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價 | ||
IR |
23+ |
DirectFET |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 | |||
IRF |
24+23+ |
SOP-8 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
DirectFET? Isometric MT |
13880 |
公司只售原裝,支持實單 |
詢價 |
