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IRF6609中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF6609
廠商型號

IRF6609

功能描述

Power MOSFET

文件大小

230.62 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-6-20 11:47:00

人工找貨

IRF6609價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

IRF6609規(guī)格書詳情

Description

The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.

? Low Conduction Losses

? Low Switching Losses

? Ideal Synchronous Rectifier MOSFET

? Low Profile (<0.7 mm)

? Dual Sided Cooling Compatible

? Compatible with existing Surface Mount Techniques

產(chǎn)品屬性

  • 型號:

    IRF6609

  • 功能描述:

    MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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