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IRF6604TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6604TR1規(guī)格書詳情
Description
The IRF6604 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6604TR1
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SURFACEMOUNTCAN-DIRE |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
23+ |
SURFACE MOUNT CAN - |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | |||
IR |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
24+ |
6000 |
全新原裝,一手貨源,全場熱賣! |
詢價 | |||
IR |
21+ |
SURFACE |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
1948+ |
QFN |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
24+ |
SURFACEMOUNTCAN-DIRE |
10000 |
只做原裝歡迎含稅交易,假一賠十,放心購買 |
詢價 | ||
IR |
24+ |
QFN |
45000 |
IR代理原包原盒,假一罰十。最低價 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MQ |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
