IRF646中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRF646規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 14A, 275V
? rDS(ON)= 0.280?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? 275VDC Rating-120VAC Line System Operation
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRF646
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HAR |
99+ |
TO-220 |
247 |
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1822+ |
TO-262 |
9852 |
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詢價 | ||
HARRIS |
23+ |
SOP8 |
5000 |
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詢價 | ||
HAR |
23+ |
TOP-3P |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
FSC |
TO-220 |
68900 |
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詢價 | |||
HAR |
24+ |
TO-220 |
30000 |
詢價 | |||
IR |
24+ |
TO220 |
58000 |
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詢價 | ||
HAR |
23+ |
1172 |
66569 |
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詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-TO-220 |
12300 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
2023+ |
TO-220 |
50000 |
原裝現(xiàn)貨 |
詢價 |
