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IRF1010NS

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1010NSPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NSTRRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010Z

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRF1010Z

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤7.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1010ZL

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO220
10050
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO220
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO220
7000
詢價(jià)
INFINEON/英飛凌
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON/英飛凌
2022+
50
6600
只做原裝,假一罰十,長(zhǎng)期供貨。
 詢價(jià)
INFINEON/英飛凌
2023+
TO-220AB
50000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
INFINEON/英飛凌
24+
TO-220
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
21+
TO220
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
更多IRF1010NPBFFETIGBTIC供應(yīng)商 更新時(shí)間2025-4-27 15:51:00

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