首頁 >IPP65R600C6>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IPP65R600C6

650V CoolMOS C6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R600C6

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP65R600C6

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.3A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPD65R600C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPP65R600C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD65R600C6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R600C6

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    IPP65R600C6

  • 功能描述：

    MOSFET 650V CoolMOS C6 Power Transistor

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
TO-220
211
只做原廠渠道 可追溯貨源
 詢價
英飛翎
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
INFINEON/英飛凌
21+23+
TO-220
2500
16年電子元件現貨供應商 終端BOM表可配單提供樣品
 詢價
INFINEON/英飛凌
23+
TO-220
15000
原裝現貨假一賠十
 詢價
INFINEON
17+
TO-220
6200
100%原裝正品現貨
 詢價
Infineon進口
1726+
TO-220
6528
只做進口原裝正品現貨,假一賠十!
 詢價
INFINE0N
23+
TO-220-3
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
22+23+
TO-220
35208
絕對原裝正品全新進口深圳現貨
 詢價
INFINEO
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
INFINEON
19+
TO-220
32000
原裝正品,現貨特價
 詢價
更多IPP65R600C6供應商 更新時間2024-11-16 9:24:00

相關規(guī)格書

更多

相關庫存

更多