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IIPP65R600C6

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD65R600C6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R600C6

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R600C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R600C6

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.3A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPX65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
N/A
2023+
SOP8
50000
全新原裝現(xiàn)貨
 詢價
IR
22+
DIP
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
DIP
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
DIP
7000
詢價
IOR
23+24
SIP
9860
原廠原包裝。終端BOM表可配單?？砷_13%增值稅
 詢價
INFINEON
24+
con
100
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index
 詢價
VISHAY
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
VISHAY/威世
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ifm electronic
7162+
con
5
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格
 詢價
更多IIPP65R600C6供應商 更新時間2024-11-16 10:38:00

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