首頁 >IPP200N25N3G>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPP200N25N3G | OptiMOSTM3 Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP200N25N3G | OptiMOS3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP200N25N3G | OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel250-V(D-S)MOSFET KeyFeatures: ?LowrDS(on)trenchtechnology ?Lowthermalimpedance ?Fastswitchingspeed | AnalogPower Analog Power | AnalogPower | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=64A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V APPLICATIONS ·Idealforhigh-frequencyswitchingandsynchronousrectification | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
IPP200N25N3G
- 制造商:
Infineon Technologies AG
- 功能描述:
MOSFET N-Channel 250V 64A OptiMOS3 TO220
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NFINEON/英飛凌 |
24+ |
TO-220 |
15000 |
詢價 | |||
Infineon(英飛凌) |
23+ |
標(biāo)準(zhǔn)封裝 |
8466 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。 |
詢價 | ||
Infineon |
1125+/113 |
TO-220 |
3500 |
原裝正品現(xiàn)貨供應(yīng)56 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
17328 |
原裝進口假一罰十 |
詢價 | ||
INFINEON |
1604CN |
TO-220AB |
11500 |
原廠直銷 |
詢價 | ||
INFINEON/英飛凌 |
1848+ |
TO-220 |
2000 |
進口原裝假一賠十支持含稅 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
TO-220 |
6000 |
原裝正品 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
4973 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-220AB |
12000 |
勤思達 只做原裝 現(xiàn)貨庫存 |
詢價 |
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