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IPP26CN10NG

OptiMOS?2 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP26CN10NG

N-channel, normal level

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP26CN10NG

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP26CN10N

iscN-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤26m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB26CN10N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB26CN10N

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB26CN10NG

N-channel,normallevel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB26CN10NG

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB26CN10NG

OptiMOS?2Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI26CN10N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI26CN10NG

OptiMOS?2Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI26CN10NG

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI26CN10NG

N-channel,normallevel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP26CN10N

iscN-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤26m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP26CN10N

OptiMOS?2Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPP26CN10NG

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEO
09+
TO-220
6000
原裝正品現(xiàn)貨
詢價(jià)
INFINEON
24+
TO-220
60000
原裝正品進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
24+
PG-TO220-3-1
8866
詢價(jià)
INF進(jìn)口原
17+
TO-220
6200
詢價(jià)
INFINEON
23+
TO-220
5000
原裝正品,假一罰十
詢價(jià)
INFINEON
23+
TO-220
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INFINEON
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
INFINEO
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
Infineon/英飛凌
18+
TO-220
30333
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
詢價(jià)
更多IPP26CN10NG供應(yīng)商 更新時(shí)間2024-12-31 17:00:00