首頁 >IPI09N03LA>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPI09N03LA | OptiMOS 2 Power-Transistor Type:IPB09N03LAG Package:PG-TO263-3-2 Marking:09N03LA ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
OptiMOS2Power-Transistor Type:IPB09N03LAG Package:PG-TO263-3-2 Marking:09N03LA ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
25VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
25VN-ChannelEnhancementModeMOSFET FEATURES ?RDS(ON),VGS@10V,IDS@30A=9m? ?RDS(ON),VGS@4.5V,IDS@30A=12m? ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUitraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
詳細(xì)參數(shù)
- 型號:
IPI09N03LA
- 功能描述:
MOSFET N-KANAL POWER MOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
24+ |
I2PAK(TO-262) |
8866 |
詢價 | |||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
INFINEON |
23+ |
TO-262 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
infineon |
2020+ |
P-TO262-3-1 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
INFINEON |
1503+ |
TO262-3 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
INFINEON |
21+ |
TO-262 |
5587 |
原裝現(xiàn)貨庫存 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
I2PAK |
10000 |
公司只做原裝正品 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INFINEON |
23+ |
TO262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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