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IPD60R600C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R600C6

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD60R600C6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD60R600C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP60R600C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R600C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R600C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R600C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R600C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R600C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R600C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R600C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R600C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU60R600C6

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-251(IPAK)packaging ?Highspeedswitching ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?DC-DCconverters ?Motorcontrol ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPU60R600C6

MetalOxideSemiconductorFieldEffectTransistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS?C6PowerTransistor Applications ??PFCstates,hardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom,UPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU60R600C6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPD60R600C6

  • 功能描述：

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon/英飛凌
20+
TO-252
35000
終端可免費提供樣品,歡迎咨詢
 詢價
INFINEON/英飛凌
2021+
SOT-252
16872
原裝進口假一罰十
 詢價
INFINEON
2021+
TO-252
9450
原裝現(xiàn)貨。
 詢價
INFINEON/英飛凌
21+
TO-252
6000
原裝正品
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON/英飛凌
22+
TO-252
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
INFINEON/英飛凌
2021+
TO-252
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
Infineon(英飛凌)
23+
TO-252
17048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價
Infineon(英飛凌)
23+
TO-252
21316
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
 詢價
INFINEON
23+
TO-252
9000
只做原裝 假一罰十
 詢價
更多IPD60R600C6供應(yīng)商 更新時間2025-1-7 13:00:00

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