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IPD90R1K2C3

N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD90R1K2C3

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPA90R1K2C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPD90R1K2C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPW90R1K2C3

N-ChannelMOSFETTransistor

DESCRITION ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA90R1K2C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA90R1K2C3

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI90R1K2C3

CoolMOS??PowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP90R1K2C3

CoolMOS??PowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW90R1K2C3

N-ChannelMOSFETTransistor

DESCRITION ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    IPD90R1K2C3

  • 功能描述：

    MOSFET N-Channel MOSFET 500-900V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO-252
10566
□原裝元器件長期供應(yīng)、靈活配合快捷供應(yīng)歡迎在線咨詢
 詢價
INFINEON/英飛凌
20+
DPAK
7290
終端可免費提供樣品,歡迎咨詢
 詢價
INFINEON/英飛凌
21+
TO-252
6000
原裝正品
 詢價
INFINEON
23+
TO-252-3
16500
一級分銷商!
 詢價
INFINEON
22+
2000
INFINEON原裝原廠渠道
 詢價
Infineon
2024+
TO-252-3
32560
原裝優(yōu)勢絕對有貨
 詢價
Infineon(英飛凌)
2303+
PG-TO252-3
4859
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
2021+
SOT-252
17136
原裝進口假一罰十
 詢價
INFINEON
21+
TO252
7500
全新原裝公司現(xiàn)貨
詢價
INFINEON
21+
TO-252
2587
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
更多IPD90R1K2C3供應(yīng)商 更新時間2025-1-22 9:12:00

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