首頁 >INA740BIREMR>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

INA740BIREMR

INA740x 85 V, 16-Bit, Precision I2C Output Digital Power Monitor with EZShunt? Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

IQXO-740

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IRC740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF740

N-ChannelPowerMOSFETs,10A,350V/400V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF740

N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET

ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

IRF740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF740

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

IRF740

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis

DCCOM

Dc Components

IRF740

10A,400V,0.550Ohm,N-ChannelPowerMOSFET

10A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

Intersil

Intersil Corporation

IRF740

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF740

10A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF740

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF740areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF740

iscN-ChannelMOSFETTransistor

?DESCRITION ?Switchmodepowersupply ?Uninterruptablepowersupply ?Highspeedpowerswitching ?FEATURES ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) ?FastSwitchingSpeed ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF740

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent-ID=10A@TC=25°C ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersup

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF740

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF740

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價格
Texas Instruments
23+/24+
14-VQFN
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價
23+
NA
6800
原裝正品,力挺實單
 詢價
Agilent
24+
IC
11418
詢價
Agilent
23+
IC
66761
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
TI德州儀器
22+
SOP8
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
 詢價
TI
500
詢價
TI(德州儀器)
1921+
SOIC-8
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價
TI(德州儀器)
2117+
SOIC-8
315000
75個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
TI(德州儀器)
2021+
SOIC-8
499
詢價
Texas Instruments(德州儀器)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
更多INA740BIREMR供應(yīng)商 更新時間2024-10-28 14:24:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多