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IRF740中文資料戈采數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF740
廠商型號(hào)

IRF740
功能描述

10A 400V N CHANNEL POWER MOSFET
文件大小

444.14 Kbytes
頁(yè)面數(shù)量

3 頁(yè)
生產(chǎn)廠商 First Components International
企業(yè)簡(jiǎn)稱

FCI【戈采】

中文名稱

戈采企業(yè)股份有限公司官網(wǎng)
原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-10-28 15:22:00

IRF740規(guī)格書(shū)詳情

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

FEATURES

◆ Robust High Voltage Termination

◆ Avalanche Energy Specified

◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

◆ Diode is Characterized for Use in Bridge Circuits

◆ IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào)：

    IRF740

  • 功能描述：

    MOSFET N-Chan 400V 10 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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