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IRF1010EZSTRLP

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF1010N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010NL

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NL

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NLPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010NPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

供應商型號品牌批號封裝庫存備注價格
原廠原包
24+
原裝
38560
原裝進口現(xiàn)貨,工廠客戶可以放款。17377264928微信同
 詢價
NXP
22+
SMD
5
詢價
NXP/恩智浦
2022+
開發(fā)板
95000
100%進口原裝正品現(xiàn)貨,公司原裝現(xiàn)貨眾多歡迎加微信咨
 詢價
NXP(恩智浦)
24+
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
NXP
24+
2000
原廠原包 優(yōu)質(zhì)渠道 主打品牌 假一賠百 可開票!
 詢價
NXP/恩智浦
2025+
57945
詢價
Infineon
23+
PG-TO247-4
15500
英飛凌優(yōu)勢渠道全系列在售
 詢價
Infineon Technologies
23+
PG-TO247-4
3652
原廠正品現(xiàn)貨供應SIC全系列
 詢價
Infineon
224
只做正品
 詢價
ROHM
24+
SOT-163SOT-23-6
6204
新進庫存/原裝
 詢價
更多IMXRT1010CEC供應商 更新時間2025-4-26 12:00:00

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