IMT65R033M2H中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

Features

? Ultra?low switching losses

? Benchmark gate threshold voltage, VGS(th) = 4.5 V

? Robust against parasitic turn?on even with 0 V turn?off gate voltage

? Flexible driving voltage and compatible with bipolar driving scheme

? Robust body diode operation under hard commutation events

? .XT interconnection technology for best?in?class thermal performance

Benefits

? Enables high efficiency and high power density designs

? Facilitates great ease of use and integration

?Provides the best price performance ratio compared to Industry’s most

ambitious roadmaps

? Reduces the size, weight and bill of materials of the systems

? Enhances system robustness and reliability