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IXGH20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGM20N60

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGM20N60A

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGP20N60B

HiPerFASTTMIGBT

IXYS

IXYS Corporation

IXGT20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXKC20N60C

CoolMOSPowerMOSFETinISOPLUS220Package

CoolMOS?PowerMOSFETinISOPLUS220?Package ElectricallyIsolatedBackSurface N-ChannelEnhancementMode LowRDS(on),SuperjunctionMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?

IXYS

IXYS Corporation

IXKC20N60C

iscN-ChannelMOSFETTransistor

?FEATURES ?Highpowerdissipation ?Staticdrain-sourceon-resistance: RDS(on)≤190m?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverters ?HighCurrentSwitchingApplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH20N60

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM20N60

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IKB20N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS DuoPack 600V 20A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
TO-263
1612
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
INFINEON/英飛凌
24+
TO-263
400
只做原廠渠道 可追溯貨源
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINEON
24+
P-TO-263-3-2
8866
詢價
INFINEON
23+
TO-263
3200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
INFINEON
23+
TO-263
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
INFINEON
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
INFINEON
2016+
TO-263
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
INFINEON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
更多IKB20N60T供應(yīng)商 更新時間2025-5-23 16:07:00

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