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INA310A

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/°

TITexas Instruments

德州儀器美國德州儀器公司

INA310A

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt

TITexas Instruments

德州儀器美國德州儀器公司

INA310A

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt

TITexas Instruments

德州儀器美國德州儀器公司

INA310A

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/°

TITexas Instruments

德州儀器美國德州儀器公司

INA310B

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/°

TITexas Instruments

德州儀器美國德州儀器公司

INA310B

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt

TITexas Instruments

德州儀器美國德州儀器公司

INA310B

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt

TITexas Instruments

德州儀器美國德州儀器公司

INA310B

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/°

TITexas Instruments

德州儀器美國德州儀器公司

IRFD310

0.4A,400V,3.600Ohm,N-ChannelPowerMOSFET

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFD310

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310PBF

HEXFET?PowerMOSFET

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE310

HEXFETTRANSISTOR

400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka

IRF

International Rectifier

IRFE310

SimpleDriveRequirements

IRF

International Rectifier

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF310

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea

IRF

International Rectifier

IRFF310

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    ICS-310-HGG

  • 制造商：

    Samtec Inc

  • 功能描述：

    CONN DIP SCKT SKT 10 POS 2.54MM SLDR ST TH - Bulk

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