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HY57V641620ET

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620ET-5

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620ET-6

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620ET-7

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620ET-H

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HG

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HG-I

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGLT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGLT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGLT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGLT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGLT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-H

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-K

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-S

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    HY57V641620ET

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

供應(yīng)商型號品牌批號封裝庫存備注價格
23+
SSOP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
23+
SSOP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
HY
06+
TSOP
1000
自己公司全新庫存絕對有貨
詢價
HYNIX
15+
TSSOP
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價
HYDAI
2339+
TSOP
5645
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
HYNIX
23+
TSOP54
7750
全新原裝優(yōu)勢
詢價
HYNIX
23+
TSOP54
5000
原裝正品,假一罰十
詢價
Hynix
16+
TSOP
2300
原裝現(xiàn)貨假一罰十
詢價
HYNIX
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價
HYNIX
2016+
TSOP
3900
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
更多HY57V641620ET供應(yīng)商 更新時間2024-12-29 9:30:00