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HUR820

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

HUR820

Ultra Fast Recovery Epitaxial Diodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

HUR820_16

Ultra Fast Recovery Epitaxial Diodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

HUR820S

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

HUR820S

Ultra Fast Recovery Epitaxial Diodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

HUR820S_16

Ultra Fast Recovery Epitaxial Diodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

IFRI820G

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.1A)

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.1A)

IRF

International Rectifier

IGAP-820

IndustrialIEEE802.11ac/g/nwirelessaccesspoint

ORING

ORing Industrial Networking Corp

IGL820R

LockingDevices

COOPER

COOPER

IM820

Pb-free,RoHSandREACHcompliant

ILSI

ILSI America LLC

IQXO-820

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IR-820

ImageRejectionMixers

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成電路河北博威集成電路有限公司

IRF820

N-CHANNELPOWERMOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF820

N-CHANNEL500V-2.5ohm-2.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF820

N-CHANNELEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF820

N-ChannelPowerMOSFETs,3.0A,450V/500V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF820

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRF820

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF820

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

詳細(xì)參數(shù)

  • 型號(hào):

    HUR820

  • 制造商:

    SIRECTIFIER

  • 制造商全稱:

    Sirectifier Semiconductors

  • 功能描述:

    快速恢復(fù)二極管Fast Recovery Diodes,軟恢復(fù)特性高性能高結(jié)溫超快恢復(fù)外延二極管Soft Recovery Behaviour ,High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes,Tj = -55°C ~ 175°C, Tjm = 175°C。

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Essentra
22+
NA
6487
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RICHCO
7005
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RICHCO
2021+
SMD
100500
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RICHCO
23+
NA
12730
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RICHCO
23+
10000
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FUN-JIN
24+
DIP
2650
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FUN-JIN
23+
DIP
8560
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FUN-JIN
1815+
DIP
6528
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FUN-JIN
2020+
DIP
80000
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FUN-JIN
2022+
DIP
90000
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更多HUR820供應(yīng)商 更新時(shí)間2025-1-13 10:08:00