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IRF820

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF820

N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF820

N-CHANNEL POWER MOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF820

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF820

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRF820

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF820

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=2.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max) ·FastSwitchingSpeed ·SimpleDriveRequirements APPLICATIONS ·Highcurrent,highspeedswitching ·Swithmodepowersupplies(smps) ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF820

20A 600V N CHANNEL POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF820

  • 功能描述：

    MOSFET N-Chan 500V 2.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2020+
TO-220
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
IR
24+
TO-220
198
只做原廠渠道 可追溯貨源
 詢價(jià)
IR
24+
TO-220A
9518
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
 詢價(jià)
IR
2021+
TO-220
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
IR 墨西哥
14+13+
TO-220
1483
只做原裝正品
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
DIP
800
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
IR
05+
TO-220
8000
原裝進(jìn)口
 詢價(jià)
IR
23+
TO220
18689
詢價(jià)
IR
98
25
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
更多IRF820供應(yīng)商 更新時(shí)間2025-2-27 9:20:00

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