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IRF1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRL1104

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104L

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104PBF

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

AdvancedProcessTechnologyLogic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IS1104

SwitchingModePowerSupply

ISOCOMISOCOM COMPONENTS

英國安數(shù)光

ISF1104

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    HT1104ZDB

  • 功能描述:

    HIGH TEMPERATURE QUAD ULTRALOW INPUT BIAS CURRENT OPERATIONAL AMPLIFIER

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HARVATEK
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LED
50000
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HARVATEK
23+
LED
10880
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HARVATEK
24+
NA/
6233
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HARVATEK
24+
LED
22055
鄭重承諾只做原裝進口現(xiàn)貨
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2017+
LED
6528
只做原裝正品假一賠十!
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HARVATEK
22+
1206
44003
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原裝HARVATEK
19+
1206
20000
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原裝HARVATEK
24+
1206
63200
一級代理/放心采購
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原裝HARVATEK
23+
1206
7300
專注配單,只做原裝進口現(xiàn)貨
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原裝HARVATEK
23+
7300
1206
專注配單,只做原裝進口現(xiàn)貨
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更多HT1104ZDB供應商 更新時間2025-6-12 10:59:00