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IL9010D

ICofcollectorelectricmotorcontroller

INTEGRAL

Integral Corp.

IL9010N

ICofcollectorelectricmotorcontroller

INTEGRAL

Integral Corp.

IRFD9010

HEXFET?TRANSISTORSP-CHANNELHEXDIP?

HEXFET?TRANSISTORSP-CHANNELHEXDIP? 1-WATTTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE FEATURES ■ForAutomaticInsertion ■Compact,EndStackable ■FastSwitching ■LowDriveCurrent ■EasyParalleled ■ExcellentTemperatureStability ■P-ChannelVersatility

IRF

International Rectifier

IRFD9010

PowerMOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?ForAutomatic

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9010

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRLPBFA

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRPBF

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRFR9010TRPBFA

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU9010

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFU9010

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9010PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

LB9010A

ProtectiveCoverforTerminalBlocks

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福倍加福（北京）過程自動(dòng)化控制設(shè)備有限公司

M9010A

M9336APXIeI/QArbitraryWaveformGenerator

KEYSIGHTKeysight Technologies

是德科技是德科技（中國）有限公司

晶體管資料

  • 型號(hào)：

    HIT9010

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    通用型 （Uni）

  • 封裝形式：

  • 極限工作電壓：

    50V

  • 最大電流允許值：

    0.2A

  • 最大工作頻率：

    300MHZ

  • 引腳數(shù)：

  • 可代換的型號(hào)：

    BC547,

  • 最大耗散功率：

    0.5W

  • 放大倍數(shù)：

    β=900

  • 圖片代號(hào)：

    NO

  • vtest：

    50

  • htest：

    300000000

  • atest：

    0.2

  • wtest：

    0.5

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS/瑞薩
24+
65200
詢價(jià)
Renesas
21+
標(biāo)準(zhǔn)封裝
465
進(jìn)口原裝,訂貨渠道!
 詢價(jià)
RENESAS/瑞薩
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
24+
NC
8600
正品原裝,正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
RENESAS/瑞薩
23+
NA/
2300
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
RENESAS/瑞薩
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RENESAS/瑞薩
2022
TO-92
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
HITACHI
4067
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
HITACHI/日立
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
更多HIT9010供應(yīng)商 更新時(shí)間2024-12-30 17:17:00

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