| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
Highsensitivity(usercanadjustitself) | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
Highsensitivity(usercanadjustitself) | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
LowPowerDualOperationalAmplifier | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國(guó)夏普微電子公司（SMA） | SHARP | ||
LowPowerDualOperationalAmplifier | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國(guó)夏普微電子公司（SMA） | SHARP | ||
HEXFETTRANSISTORSPCHANNELHEXDIP HEXFET?TRANSISTORSPCHANNELHEXDIP? 1-WATTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS P-CHANNEL -50Volt,0.20OhmHEXFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS P-CHANNEL -50Volt,0.20OhmHEXFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
VacuumFluorescentDisplayFilamentDriver | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
VacuumFluorescentDisplayFilamentDriver | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
VacuumFluorescentDisplayFilamentDriver | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
表面帖裝型 （SMD）_甚高頻 （VHF）_超高頻/特高頻
- 封裝形式：
- 極限工作電壓：
30V
- 最大電流允許值：
0.03A
- 最大工作頻率：
1.2GHZ
- 引腳數(shù)：
- 可代換的型號(hào)：
BF547,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號(hào)：
NO
- vtest：
30
- htest：
1200000000
- atest：
0.03
- wtest：
0
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HIT |
23+ |
TO92L |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
HIT |
14+ |
TO92L |
2500 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
HIT |
23+ |
原裝正品現(xiàn)貨 |
10000 |
TO92L |
詢(xún)價(jià) | ||
MURATA |
300 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | ||||
MURATA/村田 |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | |||
1822+ |
BGA |
9852 |
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!! |
詢(xún)價(jià) | |||
HIT |
2023+環(huán)?，F(xiàn)貨 |
BGA |
80 |
專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢(xún)價(jià) | ||
23+ |
SOP32 |
16567 |
正品:QQ;2987726803 |
詢(xún)價(jià) | |||
05+ |
原廠原裝 |
4341 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | |||
24+ |
SMD |
3200 |
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電! |
詢(xún)價(jià) |
