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HGTP3N60C3D

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

Harris Corporation

HGTP3N60C3D

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3D

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HARRIS

Harris Corporation

HGTP3N60C3D_07

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HARRIS

Harris Corporation

HGTD3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號：

    HGTP3N60C3D

  • 功能描述：

    IGBT 晶體管

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD
23+
TO-220
9526
詢價(jià)
HARRIS
05+
原廠原裝
4295
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
Intersil
24+
TO-220
8866
詢價(jià)
FSC
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
FAIRCHI
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
HARRIS
24+
35200
一級代理/放心采購
 詢價(jià)
FAIRCHILD/仙童
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
FAIRCHILD/仙童
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
HARRIS/哈里斯
23+
59680
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
INTERSIL
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多HGTP3N60C3D供應(yīng)商 更新時(shí)間2025-3-26 16:43:00

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