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HGTG7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

Intersil

Intersil Corporation

HGTG7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG7N60A4D

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 34A 125W TO247

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HGTG7N60A4D_05

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

Intersil

Intersil Corporation

HGTP7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

YFW7N60A4

7A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HGTG7N60A4D

  • 制造商：

    onsemi

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.7V @ 15V，7A

  • 開關(guān)能量：

    55μJ（開），60μJ（關(guān)）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關(guān)）值：

    11ns/100ns

  • 測試條件：

    390V，7A，25 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應商器件封裝：

    TO-247-3

  • 描述：

    IGBT 600V 34A 125W TO247

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO247
8950
BOM配單專家,發(fā)貨快,價格低
 詢價
onsemi/安森美
新批次
TO-247
4500
詢價
onsemi(安森美)
23+
TO-247
1224
原廠訂貨渠道,支持BOM配單一站式服務
 詢價
INTERSIL
17+
TO-247
31518
原裝正品 可含稅交易
 詢價
FAIRCHILD
23+
TO-247
9526
詢價
FAIRCHILD
24+
TO-247
8866
詢價
仙童
05+
TO-247
6000
原裝進口
 詢價
FAIRCHI
2020+
TO263
46
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAICHILD
23+
TO-3P
8000
專做原裝正品,假一罰百!
 詢價
更多HGTG7N60A4D供應商 更新時間2024-11-1 16:36:00

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