零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
H840KBCA | 包裝:散裝 封裝/外殼:軸向 類別:電阻器 通孔式電阻器 描述:RES 40K OHM 0.1% 1/4W AXIAL | TEConnectivityPassiveProductTE Connectivity Passive Product TE Connectivity Passive ProductTE ConnectivityPassiveProduct | TEConnectivityPassiveProduct | |
HIGHEFFICIENCYRECTIFIERS | DSK Diode Semiconductor Korea | DSK | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription thesepowerMOSFETsisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.AndDC-DC&DC-ACConvertersforTelecom,IndustrialandConsumerEnvironment Features ?8A,500V,RDS(on) | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelPowerMOSFET | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerMOSFET | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
8AmpSchottkyRectifier 8AmpSchottkyRectifier ?SchottkyBarrierRectifier ?GuardRingProtection ?175°CJunctionTemperature ?HighCurrentCapability ?VRRM25to45Volts ?Surfacemountpackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HITAGTMAntennaTuningDevice GeneralRemarks ForoptimalperformanceHITAGantennashavetobetunedduringproduction,respectivelybystart-upor,forservicepurposes,duringoperation.TheHITAGAntennaTuningDeviceisaveryeasytohandleandcosteffectivesolutionforthetuningof125kHzHITAGantennas.Thedevice | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
8A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司 | WXDH | ||
Directpintopindrop-inreplacementforindustry-standardpackages | ILSI ILSI America LLC | ILSI | ||
MemsOscillator,HighPerformanceDifferentialOscillator,LVPECLandLVDS1.000MHzto220.000MHz | MMD MMD Components | MMD | ||
Directpintopindrop-inreplacementforindustry-standardpackages | ILSI ILSI America LLC | ILSI | ||
MemsOscillator,HighPerformanceDifferentialOscillator,LVPECLandLVDS1.000MHzto220.000MHz | MMD MMD Components | MMD | ||
Directpintopindrop-inreplacementforindustry-standardpackages | ILSI ILSI America LLC | ILSI | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
H840KBCA
- 制造商:
TE Connectivity Passive Product
- 類別:
電阻器 > 通孔式電阻器
- 系列:
Holco, Holsworthy
- 包裝:
散裝
- 容差:
±0.1%
- 功率 (W):
0.25W,1/4W
- 成分:
金屬薄膜
- 特性:
脈沖耐受
- 溫度系數(shù):
±50ppm/°C
- 工作溫度:
-55°C ~ 155°C
- 封裝/外殼:
軸向
- 供應(yīng)商器件封裝:
軸向
- 大小 / 尺寸:
0.098" 直徑 x 0.283" 長(zhǎng)(2.50mm x 7.20mm)
- 描述:
RES 40K OHM 0.1% 1/4W AXIAL
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TE |
23+ |
NA |
70 |
通孔式電阻器 |
詢價(jià) | ||
24+ |
N/A |
51000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
TE |
2022+ |
20 |
全新原裝 貨期兩周 |
詢價(jià) | |||
TE Connectivity |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
HLLR |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) |
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