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IM840

Direct pin to pin drop-in replacement for industry-standard packages

ILSI

ILSI America LLC

IM840B

Mems Oscillator, High Performance Differential Oscillator, LVPECL and LVDS 1.000 MHz to 220.000MHz

MMD

MMD Components

IM840B

Direct pin to pin drop-in replacement for industry-standard packages

ILSI

ILSI America LLC

IM840C

Mems Oscillator, High Performance Differential Oscillator, LVPECL and LVDS 1.000 MHz to 220.000MHz

MMD

MMD Components

IM840C

Direct pin to pin drop-in replacement for industry-standard packages

ILSI

ILSI America LLC

IM840C-62B8H-200.000 MHZ

包裝：散裝 類別：晶體，振蕩器，諧振器 振蕩器 描述：PLASTIC SMD MEMS OSCILLATOR

ILSI

ILSI America LLC

IRC840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw

IRF

International Rectifier

IRC840PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw

IRF

International Rectifier

IRF840

N-CHANNEL500V-0.75ohm-8A-TO-220PowerMESH]MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF840

PowerMOStransistorAvalancheenergyrated

DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF840

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF840

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperationarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF840

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF840

8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

Intersil

Intersil Corporation

IRF840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight

IRF

International Rectifier

IRF840

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSN-CHANNEL

IRF

International Rectifier

IRF840

PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A)

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF840

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

供應商型號品牌批號封裝庫存備注價格
MODULE
1344+
132
優(yōu)勢
 詢價
IMP
22+
DFN
42341
原裝正品現(xiàn)貨,可開13個點稅
 詢價
IMP
21+
DFN
10000
原裝現(xiàn)貨假一罰十
 詢價
IM
17+
SOT26
6200
100%原裝正品現(xiàn)貨
 詢價
IM
2020+
SOT26
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IM
1923+
SOT26
5000
正品原裝品質假一賠十
 詢價
IM
23+
SOT26
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IM
2022
SOT26
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
INERGY
DFN
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
INERGY/廣閎
23+
DFN
9326
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多IM840供應商 更新時間2025-1-15 17:03:00

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