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GV2P02

TeSys Deca Manual Starter and Protector, thermal magnetic circuit protector, rotary handle, 0.16??.25 A, screw clamp terminals

Main RangeofProductTeSysGV2 RangeTeSys TeSysDeca DeviceshortnameGV2P ProductnameTeSysGV2 TeSysDeca ProductorComponentTypeCircuitbreaker DeviceApplicationMotor TripunittechnologyThermal-magnetic

SCHNEIDERSchneider Electric

施耐德施耐德電氣

GV2P02

Manual Motor Starters, Controllers, and Protectors Type GV2, GV3, and GV7

StandardFeatures TheGVfamilyofferssuchstandardfeaturesas: ?ULListed,CSACertified,andCEMarked ?ULListedforGroupMotorApplications(formoredetailsseepage7) ?Overloadrelay —Class10,ambientcompensated(GV2,GV3) —Class10,solidstate(GV7) ?Singlephasesensiti

SCHNEIDERSchneider Electric

施耐德施耐德電氣

MGSF2P02HD

PowerMOSFET2Amps,20Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMDF2P02E

DUALTMOSMOSFET2.5AMPERES25VOLTS

MediumPowerSurfaceMountProducts TMOSDualP-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMDF2P02E

PowerMOSFET2Amps,25VoltsP??hannelSO??,Dual

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMDF2P02HD

DUALTMOSPOWERFET2.0AMPERES20VOLTS

MediumPowerSurfaceMountProducts TMOSP-ChannelFieldEffectTransistors MiniMOS?devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theya

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMDF2P02HD

PowerMOSFET2Amps,20VoltsP??hannelSO??,Dual

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMSF2P02E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMSF2P02E

SINGLETMOSPOWERMOSFET2.5AMPERES20VOLTS

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldsEffectTransistors MiniMOS?devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableo

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTSF2P02HD

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTSF2P02HD

SINGLETMOSPOWERFET3.0AMPERES20VOLTSRDS(on)=0.090OHM

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistor Micro8?devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighene

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SDT2P02

-2.2A,-20V,RDS(ON)200m(ohm)Dual-PEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SMSA2P02

SafetyMagneticSensorsCylindricalSafetyMagneticSensorsTypesSMSA2P02

CARLOGAVAZZI

Carlo Gavazzi Holding AG

SUM2P02-C

DualP-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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5
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施耐德
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10000
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23+
SOT-23-3L
63000
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Gem晶群
2018+
SOT23-3
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GEM晶群
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VB
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68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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GEM-MICRO
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12000
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更多GV2P02供應(yīng)商 更新時(shí)間2024-12-24 9:50:00