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GV2P03

TeSys Deca Manual Starter and Protector, thermal magnetic circuit protector, rotary handle, 0.25??.40 A, screw clamp terminals

Main RangeofProductTeSysGV2 RangeTeSys TeSysDeca DeviceshortnameGV2P ProductnameTeSysGV2 TeSysDeca ProductorComponentTypeCircuitbreaker DeviceApplicationMotor TripunittechnologyThermal-magnetic

SCHNEIDERSchneider Electric

施耐德施耐德電氣

GV2P03

Manual Motor Starters, Controllers, and Protectors Type GV2, GV3, and GV7

StandardFeatures TheGVfamilyofferssuchstandardfeaturesas: ?ULListed,CSACertified,andCEMarked ?ULListedforGroupMotorApplications(formoredetailsseepage7) ?Overloadrelay —Class10,ambientcompensated(GV2,GV3) —Class10,solidstate(GV7) ?Singlephasesensiti

SCHNEIDERSchneider Electric

施耐德施耐德電氣

2P03

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

PanasonicPanasonic Semiconductor

松下松下電器

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

PanasonicPanasonic Semiconductor

松下松下電器

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitchesOverstroketravel

■Features ●Externaldimensions:6.5mmX6.0mm,Height1.8mm (Excludingthepushplate) ●Withorwithoutgroundterminal,height,operatingforce ●Overstroketravel ■RecommendedApplications ●Operatingswitchesforotherelectronicequip

PanasonicPanasonic Semiconductor

松下松下電器

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

PanasonicPanasonic Semiconductor

松下松下電器

EVQQ2P03W

6mmSquareThinTypeSMDLightTouchSwitches

■Features ●Externaldimensions:6.0mm6.1mm,Height5.0mm (Includingthepushplate) ●Steadyandlowcontactresistance(100mΩmax.) ●Excellentsolderability(J-bent-typeterminals) ■RecommendedApplications ●Carelectronicsequipment

PanasonicPanasonic Semiconductor

松下松下電器

MMDF2P03HD

PowerMOSFET2Amps,30VoltsP??hannelSO??,Dual

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTSF2P03HD

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTSF2P03HD

SINGLETMOSPOWERMOSFET2.7AMPERES30VOLTSRDS(on)=0.090OHM

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistor Micro8?devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighene

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RFT2P03L

2.1A,30V,0.150Ohm,P-ChannelLogicLevel,PowerMOSFET

ThisproductisaP-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulator

Intersil

Intersil Corporation

RT2P03M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONPNPEPITAXIALTYPE

DESCRIPTION RT2P03Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=10KΩ,R2=10KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

SDT2P03-C

Dual-PEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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Telemecanique
2022+
5
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Schneider Electric
22+
81000
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施耐德
23+
10000
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2021+
1000
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24+
N/A
56000
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Gem-micro
23+
SOT-23-3L
63000
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Gem晶群
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SOT23-3
7500
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VB
SOT-23-3L
68900
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GEM-MICRO
23+
12000
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更多GV2P03供應(yīng)商 更新時間2025-1-11 9:50:00

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