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GT430NS

Mini size of Discrete semiconductor elements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GT430PS

MinisizeofDiscretesemiconductorelements

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HC-430

HybridAssembliesOPTICRECEIVERMODULES

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HCPL-J430E

IntelligentPowerModuleandGateDriveInterfaceOptocouplers

Description TheHCPL-4506andHCPL-0466containaGaAsPLEDwhiletheHCPL-J456andtheHCNW4506containanAlGaAsLED.TheLEDisopticallycoupledtoanintegratedhighgainphotodetector.Minimizedpropagationdelaydi?erencebetweendevicesmakestheseoptocouplersexcellentsolutionsforim

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

HDA430

DimensionalDrawing

HANTRONIX

Hantronix,Inc

HDA430-H

DimensionalDrawing

HANTRONIX

Hantronix,Inc

HRDS430

Dedicated-SingleShot

Description TheHRDSSeriescombinesanelectromechanicalrelayoutput withmicrocontrollertimingcircuitry.Itoffers12to230V operationinfiveoptionsandfactoryfixed,onboardorexternal adjustabletimedelayswitharepeataccuracyof±0.5.The outputcontactratingallowsfordirec

Littelfuselittelfuse

力特力特公司

HSMC-A430

SurfaceMountLEDIndicator

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

HV430

HighVoltageRingGenerator

GeneralDescription TheSupertexHV430isahighvoltagePWMringgeneratorintegratedcircuit.Thehighvoltageoutputs,VPGATEandVNGATE,areusedtodrivethegatesofexternalhighvoltageP-channelandN-channelMOSFETsinapush-pullconfiguration.Overcurrentprotectionisimplementedfo

SUTEX

Supertex, Inc

HV430WG

HighVoltage1RENRingGenerator

SUTEX

Supertex, Inc

HV430WG

HighVoltageRingGenerator

GeneralDescription TheSupertexHV430isahighvoltagePWMringgeneratorintegratedcircuit.Thehighvoltageoutputs,VPGATEandVNGATE,areusedtodrivethegatesofexternalhighvoltageP-channelandN-channelMOSFETsinapush-pullconfiguration.Overcurrentprotectionisimplementedfo

SUTEX

Supertex, Inc

HV430WG-G

High-VoltageRingGenerator

SUTEX

Supertex, Inc

HW430

1/2WATTMETAL

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I430-FLEXI-TF

6000AFlexibleACCurrentProbe

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IQXO-430

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IRF430

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs(on)athighvoltage ?Improvedinductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapactiance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablitiy ?TO-3package(Highvol

SamsungSamsung semiconductor

三星三星半導體

IRF430

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF430

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF430

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRF430

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    GT430NS

  • 功能描述:

    Mini size of Discrete semiconductor elements

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更多GT430NS供應商 更新時間2024-12-27 16:30:00