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GLAR3910

SURFCOIL SMT INDUCTORS

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GLAR3910M

SURFCOIL SMT INDUCTORS

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GLUR3910

SURFCOILSMTINDUCTORS

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etc未分類制造商etc2未分類制造商

GLUR3910M

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GLXR3910

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HTE3910MOHM

HighVoltage/ThickFilmResistors

Riedon

Riedon Powertron

IIRFR3910

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤115m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRD3910

20AND30AMPFASTRECOVERYRECTIFIERDIODES

Description ThisrangeoffastrecoverydiodesisdesignedforapplicationsinDCpowersupplies,inverters,choppers,ultrasonicsystemandforuseasafree-wheelingdiode. Features ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■Stu

IRF

International Rectifier

IRD3910

RectifiersFastRecovery

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFR3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFR3910

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤115m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3910

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

IRFR3910

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRFR3910PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3910PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910TR

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3910TR

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

詳細(xì)參數(shù)

  • 型號:

    GLAR3910

  • 功能描述:

    SURFCOIL SMT INDUCTORS

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
SPRAGUE-GOODMAN
23+
SMD1210
62280
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
SPRAGUE-GOODMAN
21+
SMD1210
62280
詢價(jià)
加高
23+
SMD
26418
全新原裝現(xiàn)貨,專業(yè)代理熱賣
詢價(jià)
GRYSTALUNIT
22+
SMD
50000
原裝正品.假一罰十
詢價(jià)
TXC/臺灣晶技
2402+
SMD
8324
原裝正品!實(shí)單價(jià)優(yōu)!
詢價(jià)
SAMSUNG/三星
2102+
NA
6854
只做原廠原裝正品假一賠十!
詢價(jià)
SAMSUNG
100000
普通
詢價(jià)
HY
24+
DIP
7500
詢價(jià)
23+
5
現(xiàn)貨庫存
詢價(jià)
TSC/臺灣半導(dǎo)體
23+
DIP
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多GLAR3910供應(yīng)商 更新時(shí)間2024-11-2 11:09:00