| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：G20；Package：SC-70；MOS FIELD EFFECT TRANSISTOR N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1658isanN-channelverticaltypeMOSFETwhich canbedrivenby2.5Vpowersupply. AstheMOSFETislowGateLeakageCurrent,itissuitablefor appliancesincludingFilterCircuit. FEATURES ?DirectlydrivenbyICshavinga3Vpowe | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Marking：G20；Package：PowerDI123；1.0A SURFACE MOUNT STANDARD RECOVERY RECTIFIER PowerDI123 Features -GlassPassivatedDieConstruction -IdeallySuitedforAutomatedAssembly -LowProfileDesign,PackageHeightLessthan1.0mm -LowReverseLeakageCurrent -ExceptionalThermalTransferBasedonExposedHeatSinkontheUndersideoftheDevice -Lead-FreeFinish;RoHSCompliant | DIODES Diodes Incorporated | DIODES | ||
Marking：G20；Package：DO-214AC；Zener Diodes | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
Marking：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET Description TheG20N03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ?Powerswitch ?DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
Marking：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description TheG20N03Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ? Powerswitch DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
Marking：G20N06；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET Description TheG20N06D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
Marking：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
Marking：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
Marking：G20P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
Marking：G20N60C3；Package：TO-263AB；45A, 600V, UFS Series N-Channel IGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately | Intersil Intersil Corporation | Intersil |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
射頻/高頻放大 （HF）_靜噪放大 （LN）_寬頻帶放大
- 封裝形式：
直插封裝
- 極限工作電壓：
- 最大電流允許值：
0.1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-11
- vtest：
0
- htest：
999900
- atest：
0.1
- wtest：
0.625
詳細(xì)參數(shù)
- 型號：
G20
- 制造商：
VPC
- 制造商全稱：
VPC
- 功能描述：
Protective Cover, G20, Receiver
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XP Power |
24+ |
N/A |
12000 |
一級代理保證進口原裝正品假一罰十價格合理 |
詢價 | ||
WESTCODE |
23+ |
模塊 |
900 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
FSC |
23+ |
TO3P |
9526 |
詢價 | |||
哈里斯 |
06+ |
TO-247 |
3500 |
原裝 |
詢價 | ||
H |
24+ |
TO247 |
3000 |
詢價 | |||
VISHAY |
703 |
343 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
NVIDIA |
08+ |
BGA |
1 |
詢價 | |||
INF |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
哈里斯 |
23+ |
TO-247 |
3000 |
全新原裝 |
詢價 | ||
MNC |
2016+ |
DIP20 |
8850 |
只做原裝,假一罰十,公司專營變壓器,濾波器! |
詢價 |
