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FTK9926

Advanced trench process technology

FS

First Silicon Co., Ltd

GAPM9926

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GAPM9926C

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GSS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GSS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GT9926NW

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GTC9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GTC9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GTS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926providesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GTS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent *Surfacemountpackage

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

H9926CS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926CTS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926S

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926TS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HM9926B

DualN-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

JMTP9926A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

KD9926

DualN-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

KI9926A

DualN-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

LM9926B

20VDS竊??2VGS竊?A(ID)DualN-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LO9926B

DualN-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

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FIRSTSILICON
23+
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57678
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24+
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CJIANG(長江微電)
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con
10000
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24+
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500
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2010+
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66
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96
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PANASONIC
2022+
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8600
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2023+
TO-162
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