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GAPM9926C

Mini size of Discrete semiconductor elements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GSS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GSS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GT9926NW

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GTC9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GTC9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GTS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926providesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent

GTM

勤益投資控股股份有限公司

GTS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent *Surfacemountpackage

GTM

勤益投資控股股份有限公司

H9926CS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926CTS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926S

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926TS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HM9926B

DualN-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

JMTP9926A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

KD9926

DualN-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

KI9926A

DualN-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

LM9926B

20VDS竊??2VGS竊?A(ID)DualN-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LO9926B

DualN-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MAX9926

VariableReluctanceSensorInterfaceswithDifferentialInputandAdaptivePeakThreshold

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX9926

VariableReluctanceSensorInterfaceswithDifferentialInputandAdaptivePeakThreshold

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    GAPM9926C

  • 功能描述:

    Mini size of Discrete semiconductor elements

供應(yīng)商型號品牌批號封裝庫存備注價格
SINYORK
23+
SO-8
45000
原裝正品現(xiàn)貨
詢價
APPOTECH
23+
QFP
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
XX
13+PB
QFP
46
剛到現(xiàn)貨加微13425146986
詢價
OSRAM OPTO
23+
NA
6000
原裝現(xiàn)貨 庫存特價/長期供應(yīng)元器件代理經(jīng)銷
詢價
OSRAM/歐司朗
24+
LED
6000
絕對原廠原裝,長期優(yōu)勢可定貨
詢價
OSRAM
20000
詢價
OSRAM/歐司朗
23+
LED
6000
原裝歐司朗 訂貨Q詢
詢價
OSRAM(歐司朗)
23+
SMD
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
24+
N/A
48000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
OSRAM/歐司朗
2019+
LED
600000
原裝正品,誠信經(jīng)營。
詢價
更多GAPM9926C供應(yīng)商 更新時間2024-11-2 13:00:00