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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQP1N60	文件：519.409 Kbytes Page：8 Pages	QFETN-CHANNEL FEATURES ?AdvancedNewDesign ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:5.0nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):9.3?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP1N60	文件：65.34 Kbytes Page：1 Pages	600VN-ChannelMOSFET DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	TGS Tiger Electronic Co.,Ltd	TGS
FQPF1N60	文件：542.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF1N60	文件：548.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF1N60T	文件：548.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT1N60C	文件：1.04346 Mbytes Page：8 Pages	N-ChannelQFETMOSFET600V,0.2A,11.5Ohm Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor? ’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformance	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT1N60CTF-WS	文件：1.04346 Mbytes Page：8 Pages	N-ChannelQFETMOSFET600V,0.2A,11.5Ohm Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor? ’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformance	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60	文件：543.8 Kbytes Page：9 Pages	600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60	文件：549.28 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：640.5 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：758.35 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：824.93 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQU1N60C	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：330.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQU1N60CTU	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FTK1N60	文件：222.6 Kbytes Page：7 Pages	1.0Amps,600VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
FTK1N60D	文件：321.98 Kbytes Page：7 Pages	1.0Amps,600VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
FTK1N60F	文件：321.98 Kbytes Page：7 Pages	1.0Amps,600VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
FTK1N60I	文件：321.98 Kbytes Page：7 Pages	1.0Amps,600VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS

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詳細(xì)參數(shù)

型號(hào)：
FQN1N60CBU
功能描述：
MOSFET 600V NCH MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市高捷芯城科技有限公司	FQN1N60CBU	onsemi(安森美)	23+	TO-92-3	8498	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價(jià)
深圳市鼎盛源芯科技有限公司	FQN1N60CBU	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢	詢價(jià)
深圳市正邁科技有限公司	FQN1N60CBU	FSC/ON	23+	原包裝原封 □□	23185	原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢庫存	詢價(jià)
深圳市河鋒鑫科技有限公司	FQN1N60CBU	Fairchild/ON	22+	TO2263 TO923 (TO226AA)	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市鵬順微電子科技有限公司	FQN1N60CBU	ON Semiconductor	2022+	TO-226-3,TO-92-3 標(biāo)準(zhǔn)主體(!-	38550	全新原裝支持表配單中國著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	FQN1N60CBU	Fairchild	23+		33500		詢價(jià)
深圳龐田科技有限公司	FQN1N60CBU	FAIRCHILD/仙童	2023+	TO-92	11000	AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站	詢價(jià)
深圳市安富世紀(jì)電子有限公司	FQN1N60CBU	Fairchild/ON	23+	TO2263 TO923 (TO226AA)	8000	只做原裝現(xiàn)貨	詢價(jià)
艾睿國際（香港）有限公司	FQN1N60CT	N/A	2021+	SMD	100500	一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	FQN1N60CTA	FAI	17+	TO92	6200	100%原裝正品現(xiàn)貨	詢價(jià)

更多FQN1N60CBU供應(yīng)商更新時(shí)間2025-1-18 10:22:00

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