99久久www免费人成精品,久久综合亚洲色HEZYO国产

首頁 >FQI4N20TU>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQP4N20	文件：2.50977 Mbytes Page：9 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
FQP4N20	文件：302.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP4N20	文件：688.08 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP4N20	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP4N20L	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF4N20	文件：726 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?2.8A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF4N20L	文件：541.4 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQT4N20	文件：629.01 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQT4N20L	文件：627.52 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQT4N20LTF	文件：2.04983 Mbytes Page：8 Pages	N-ChannelQFET?MOSFET200V,0.85A,1.40廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQT4N20LTF-TP	文件：3.04984 Mbytes Page：5 Pages	N-ChannelEnhancementModePowerMOSFET GENERALFEATURES Vos=200V 'b=1.0A@Ves=10V \|Roson)￡1.35Q@Ves=10V \|SOT-223package.	TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司	TECHPUBLIC
FQU4N20	文件：701.83 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU4N20	文件：329.68 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU4N20L	文件：330.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU4N20L	文件：519.64 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU4N20L	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
KF4N20LD	文件：601.68 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC
KF4N20LD	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC
KF4N20LD/I	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC
KF4N20LDI	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC

12 >>>

詳細參數(shù)

型號：
FQI4N20TU
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鼎盛源芯科技有限公司	FQI4N20TU	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢	詢價
深圳市正邁科技有限公司	FQI4N20TU	FSC/ON	23+	原包裝原封 □□	5000	原裝進口特價供應 QQ 1304306553 更多詳細咨詢庫存	詢價
深圳市百域芯科技有限公司	FQI4N20TU	FAIRCHILD/仙童	21+	I2-PAKTO-262	30000	優(yōu)勢供應實單必成可13點增值稅	詢價
深圳市航潤創(chuàng)能電子集團有限公司	FQI4N20TU	FSC	21+	TO-262	3000	原裝現(xiàn)貨假一賠十	詢價
深圳市國宇半導體科技有限公司	FQI4N20TU	FAIRCHILD仙童	23+	I2PAK	10000	公司只做原裝正品	詢價
深圳市河鋒鑫科技有限公司	FQI4N20TU	Fairchild/ON	22+	TO2623 Long Leads I2Pak TO262A	9000	原廠渠道,現(xiàn)貨配單	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	FQI4N20TU	FAIRCHILD/仙童	23+	TO-262	10000	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市威雅利發(fā)展有限公司	FQI4N20TU	FSC	0117+	TO-262	3000	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市鵬順微電子科技有限公司	FQI4N20TU	ON Semiconductor	2022+	TO-262-3,長引線,I2Pak,TO-26	38550	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市旺財半導體有限公司	FQI4N20TU	Fairchild	23+		33500		詢價

更多FQI4N20TU供應商更新時間2025-1-18 10:06:00

詳細參數(shù)

相關規(guī)格書

相關庫存