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FQI12N60C

600V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI12N60C

600V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP12N60

600VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

TGS

Tiger Electronic Co.,Ltd

FQP12N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP12N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP12N60C

FQP12N60C/FQPF12N60C

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP12N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQP12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60C

FQP12N60C/FQPF12N60C

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF12N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF12N60C

iscSiliconNPNPowerTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF12N60CT

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF12N60T

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FSA12N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細參數(shù)

  • 型號:

    FQI12N60C

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    600V N-Channel MOSFET

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO-262
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
詢價
FAIRCHILD
24+
TO-262(I2PAK)
8866
詢價
仙童
06+
TO-262
2500
原裝庫存
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FAIRC
2020+
TO-262(I2PAK)
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
FAIRCHILD
2023+環(huán)保現(xiàn)貨
TO-262(I2PAK
20000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
詢價
FAIRC
23+
TO-262(I2PAK)
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
FAIRCHILD/仙童
23+
TO-262
6000
原裝正品真實庫存現(xiàn)貨熱賣
詢價
FAIRC
23+
TO-262(I2PAK)
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
詢價
更多FQI12N60C供應商 更新時間2024-10-26 8:58:00