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FQA28N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=28.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQA28N50

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?28.4A,500V,RDS(on)=0.16?@VGS=10V ?Lowgatecharge(typical110nC) ?LowCrss(typical60pF) ?Fastswitching

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA28N50

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA28N50

500V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA28N50F

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA28N50F

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH28N50

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

HiPerRFPowerMOSFETs

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FQA28N50

  • 功能描述：

    MOSFET 500V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO-3P-3L
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
FSC
15+
TO-247
8000
全新原裝公司現(xiàn)貨
詢價
FAIRCHILD/仙童
21+
TO-3P
6000
原裝正品
 詢價
ON
23+
TO-3P
3000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
FSC/仙童
23+
TO-247
35200
一級分銷商
 詢價
ON/安森美
22+
TO-3P
8000
原裝正品
 詢價
ON
24+
TO-3P
4500
原裝現(xiàn)正品可看現(xiàn)貨
 詢價
FAIRCHILD/仙童
2021+
TO-3P
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
ONSEMI/安森美
22+
TO-3P
4500
全新原裝正品現(xiàn)貨實單價可談
 詢價
Fairchild(飛兆/仙童)
2023+
N/A
4550
全新原裝正品
 詢價
更多FQA28N50供應商 更新時間2025-1-23 13:36:00

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