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FMP11N60E

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMV11N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMV11N60E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura

FujiFuji Electric

富士電機富士電機株式會社

HFF11N60S

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HMS11N60I

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HMS11N60K

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

ISPP11N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPW11N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    FMP11N60E

  • 制造商：

    FUJI

  • 制造商全稱：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJI/富士電機
17+
TO-220AB
31518
原裝正品 可含稅交易
 詢價
日本富士電機
1822+
TO-220AB
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
日本富士電機
18+
TO-220AB
41200
原裝正品,現(xiàn)貨特價
 詢價
TOSHIBA/東芝
23+
SOT-353
69820
終端可以免費供樣,支持BOM配單!
 詢價
FUJI/富士電機
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
FUJI
21+
TO-220
49
原裝現(xiàn)貨假一賠十
 詢價
E
23+
TO-220AB
10000
公司只做原裝正品
 詢價
FUJI/富士電機
22+
TO-220
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
FUJI
13+
TO-220
49
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
FUJI
原廠封裝
1000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
更多FMP11N60E供應(yīng)商 更新時間2025-1-28 14:00:00

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