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首頁 >HFF11N60S>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HFF11N60S	文件：716.92 Kbytes Page：7 Pages	N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司	Huashan
HMS11N60I	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司	HMSEMI
HMS11N60K	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司	HMSEMI
ISPP11N60CFD	文件：338.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
ISPW11N60CFD	文件：335.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFH11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
KP11N60D	文件：388.24 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會社	KEC
KP11N60F	文件：390.31 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會社	KEC
KPS11N60D	文件：388.63 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會社	KEC
KPS11N60F	文件：390.57 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會社	KEC
KSM11N60	文件：2.00345 Mbytes Page：9 Pages	Loweffectiveoutputcapacitance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDF11N60	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.03328 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市萊克訊科技有限公司	HF-F194NWB5	HARVATEK	1922+	NA	35689	原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨	詢價
深圳市金芯陽科技有限公司	HFF4093BT	FSC	2021++	SMD	10000	原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15	詢價
深圳良洲科技有限公司	HFF5BR3X0.5X10	BIFU/QUANYING	兩年內	NA	1408	實單價格可談	詢價
深圳市喜鵲微科技有限公司	HFFAA-HFFHU(插入式模塊)	HF宏發(fā)	20+		16300	只做全新原裝,支持樣品	詢價
深圳市賽美科科技有限公司	HFF-MCF-127/113.8MHZ	TOYOCOM		ROHS	13352	一級代理原裝正品假一罰十價格優(yōu)勢長期供貨	詢價
貿澤芯城（深圳）電子科技有限公司	HFF-MCF-720-71.000000MHZ	EPSON/愛普生	23+	SMD	32643	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市科恒偉業(yè)電子有限公司	HFG101M22020FVA	Zeasset(智勝新)	2027+	Snap in,22x20mm	8420	代理優(yōu)勢渠道,假一賠十現(xiàn)貨或訂貨	詢價
現(xiàn)代芯城（深圳）科技有限公司	HFG101M22020FVA		24+	N/A	64000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市星佑電子有限公司	HFG13/024-2Z1	宏發(fā)	22+23+	原封	2000	一切實報只做原裝正品現(xiàn)貨	詢價
深圳市藍山航業(yè)科技有限公司	HFG208WSR01	rectron	24+		500000	行業(yè)低價,代理渠道	詢價

更多HFF11N60S供應商更新時間2025-1-15 14:30:00

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