零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FMH23N50E | N-CHANNEL SILICON POWER MOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | |
FMH23N50E | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
N-CHANNEL SILICON POWER MOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.235?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A) FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-ChannelMOSFET500V,23.0A,0.245(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.245Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET500V,23.0A,0.245(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SalesOutlineDrawing | MSPIMallory Sonalert Products Inc 馬洛里馬洛里索納特產(chǎn)品有限公司 | MSPI |
詳細(xì)參數(shù)
- 型號(hào):
FMH23N50E
- 制造商:
Fuji Electric
- 功能描述:
IC,MOSFET; N-Channel,FAP-E3 Planar; 500V; 23A; 315W; TO-3P(Q)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FUJI |
23+ |
TO-3P |
20540 |
保證進(jìn)口原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
FUJI |
2020+ |
TO-3P |
9600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
FUJI(富士電機(jī)) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢(xún)價(jià) | ||
FUJI進(jìn)口 |
23+ |
TO-3P |
20000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
FUJI/富士電機(jī) |
24+ |
TO-3P |
3580 |
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢(xún)價(jià) |
詢(xún)價(jià) | ||
FUJI |
2019 |
TO-3P |
19700 |
INFINEON品牌專(zhuān)業(yè)原裝優(yōu)質(zhì) |
詢(xún)價(jià) | ||
FUJI/富士電機(jī) |
22+ |
TO-3P |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢(xún)價(jià) | ||
FUJI/富士通 |
22+ |
TO-3P |
3 |
只做原裝正品 |
詢(xún)價(jià) | ||
FUJI |
17+ |
TO3 |
6200 |
100%原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
FUJI |
19+ |
TO-3P |
71601 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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相關(guān)庫(kù)存
更多- FMH23N50ESCQ-P
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