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FMR23N50E

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMR23N50ES

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機富士電機株式會社

FMV23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機富士電機株式會社

FMV23N50ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機富士電機株式會社

IRFP23N50L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A)

FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Application

IRF

International Rectifier

IRFP23N50L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.235?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP23N50L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50LPBF

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50LPBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A)

FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-Free

IRF

International Rectifier

MDQ23N50D

N-ChannelMOSFET500V,23.0A,0.245(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ23N50DTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.245Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDQ23N50DTP

N-ChannelMOSFET500V,23.0A,0.245(ohm)

MGCHIP

MagnaChip Semiconductor.

PSR23N50AK

SalesOutlineDrawing

MSPIMallory Sonalert Products Inc

馬洛里馬洛里索納特產(chǎn)品有限公司

PSR23N50ATRK

SalesOutlineDrawing

MSPIMallory Sonalert Products Inc

馬洛里馬洛里索納特產(chǎn)品有限公司

SIHFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SiHFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號:

    FMR23N50E

  • 制造商:

    FUJI

  • 制造商全稱:

    Fuji Electric

  • 功能描述:

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJITSU/富士通
23+
TO-3PF
10000
公司只做原裝正品
詢價
FUJI/富士電機
23+
TO-3PF
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FUJITSU/富士通
22+
TO-3PF
6000
十年配單,只做原裝
詢價
FUJI/富士電機
23+
TO-3PF
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
FUJI
原廠封裝
1000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
FUJI/富士電機
23+
NA/
3270
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
富士通FUJITSU
22+
TO-3PF
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
FUJI/富士電機
23+
N/A
11550
FUJI/富士電機系列在售
詢價
FUJI/富士電機
23+
N/A
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
詢價
富士通FUJITSU
24+
TO-3PF
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多FMR23N50E供應(yīng)商 更新時間2025-1-17 14:30:00