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FGP90N30

300V, 90A PDP IGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGP90N30TU

300V, 90A PDP IGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

DAM90N30D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM90N30G

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGA90N30

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30provideslowconductionandswitchingloss.FGA90N30offerstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features ?HighCurrentCapability ?Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGA90N30D

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30Dprovideslowconductionandswitchingloss.FGA90N30DofferstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features ?HighCurrentCapability ?Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGFP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGPF90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXFK90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK90N30

HiPerFETPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCconverters ?Battery

IXYS

IXYS Corporation

IXFN90N30

HiPerFETPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Corporation

IXFR90N30

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR90N30

PowerMOSFET

IXYS

IXYS Corporation

IXFX90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX90N30

HiPerFETPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCconverters ?Battery

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    FGP90N30

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    300V, 90A PDP IGBT

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
FAIRCHILD
24+
TO-220
8866
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHILD
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
FAIRCHILD
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
NEC
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
FAIRCHILD/仙童
23+
TO-220
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
 詢價
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
FAIRCHILD/仙童
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
更多FGP90N30供應(yīng)商 更新時間2024-10-27 14:00:00

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