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F1129HB

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1129LB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1129MB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1129MBEVB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1129MBNELI

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

GP1129

U.S.ELECTRICALDIVISIONMANCHESTER,NH03108

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HAT1129R

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

HTT1129E

SiliconNPNEpitaxialTwinTransistor

Features ?Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HTT1129EZTL-E

SiliconNPNEpitaxialTwinTransistor

Features ?Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISF1129

N-ChannelPowerMOSFET

DESCRIPTION ·AvalancheRated ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=230mΩ(Max)@VGS=10V ·100%avalanchetested APPLICATIONS ·HighPowerDensity ·EasytoMount ·SpaceSavings

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
N/A
47000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
RENESAS(瑞薩)/IDT
2447
VFQFPN-12(2x2)
315000
nan一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單
 詢價(jià)
RENESAS(瑞薩)/IDT
2021+
VFQFPN-12(2x2)
499
詢價(jià)
RENESAS(瑞薩)/IDT
23+
QFN12EP(2x2)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
Renesas Electronics Corporatio
24+
12-WFQFN 裸露焊盤
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
RENESAS(瑞薩)/IDT
23+
QFN12EP(2x2)
6000
誠信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
RENESAS瑞薩/IDT
23+
VFQFPN-12(2x2)
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
SIPEX
23+
SOT-23-3
12735
詢價(jià)
MICREL
1742+
SOT23-6
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢價(jià)
SYNOXO
19+
SOT23-6
70757
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
更多F1129HB供應(yīng)商 更新時(shí)間2025-2-19 10:06:00

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