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IMIC9530CY

PCIXI/OSystemClockGeneratorwithEMIControlFeatures

Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

IMIC9530CY

PCIXI/OSystemClockGeneratorwithEMIControlFeatures

Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac

SILABS

Silicon Laboratories

IMIC9530CYT

PCIXI/OSystemClockGeneratorwithEMIControlFeatures

Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

IMIC9530CYT

PCIXI/OSystemClockGeneratorwithEMIControlFeatures

Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac

SILABS

Silicon Laboratories

IRF9530

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9530

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9530

12A,100V,0.300Ohm,P-ChannelPowerMOSFETs

12A,100V,0.300Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

Intersil

Intersil Corporation

IRF9530

TRANSISTORS

Features: ■P-ChannelVersatility ■CompactPlasticPackage ■FastSwitching ■LowDriveCurrent ■EaseofParalleling ■ExcellentTemperatureStability

IRF

International Rectifier

IRF9530

P-ChannelMOSFET

■Features ●VDS(V)=-100V ●ID=-13A(VGS=-10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

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16+
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10000
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24+
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16200
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17+
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6200
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8000
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35689
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SOT-89
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更多ELM9530C-S供應(yīng)商 更新時(shí)間2025-6-23 10:54:00

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