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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IMIC9530CY	文件：263.15 Kbytes Page：11 Pages	PCIX I/O System Clock Generator with EMI Control Features Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac	CypressCypressSemiconductor 賽普拉斯賽普拉斯半導體公司	Cypress
IMIC9530CY	文件：154.45 Kbytes Page：10 Pages	PCIX I/O System Clock Generator with EMI Control Features Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac	SILABS Silicon Laboratories	SILABS
IMIC9530CYT	文件：263.15 Kbytes Page：11 Pages	PCIX I/O System Clock Generator with EMI Control Features Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac	CypressCypressSemiconductor 賽普拉斯賽普拉斯半導體公司	Cypress
IMIC9530CYT	文件：154.45 Kbytes Page：10 Pages	PCIX I/O System Clock Generator with EMI Control Features Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac	SILABS Silicon Laboratories	SILABS
IRF9530	文件：566.6 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF9530	文件：508.31 Kbytes Page：12 Pages	P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半導體	Samsung
IRF9530	文件：378.27 Kbytes Page：6 Pages	P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半導體	Samsung
IRF9530	文件：63.6 Kbytes Page：7 Pages	12A,100V,0.300Ohm,P-ChannelPowerMOSFETs 12A,100V,0.300Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe	Intersil Intersil Corporation	Intersil
IRF9530	文件：449.2 Kbytes Page：6 Pages	TRANSISTORS Features: ■P-ChannelVersatility ■CompactPlasticPackage ■FastSwitching ■LowDriveCurrent ■EaseofParalleling ■ExcellentTemperatureStability	IRF International Rectifier	IRF
IRF9530	文件：1.26984 Mbytes Page：3 Pages	P-ChannelMOSFET ■Features ●VDS(V)=-100V ●ID=-13A(VGS=-10V) ●RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司	KEXIN
IRF9530	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
IRF9530	文件：158.27 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF9530	文件：303.03 Kbytes Page：2 Pages	iscP-ChannelMosfetTransistor FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF9530N	文件：335.28 Kbytes Page：2 Pages	P-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF9530N	文件：2.77627 Mbytes Page：7 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF9530N	文件：113.13 Kbytes Page：8 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt	IRF International Rectifier	IRF
IRF9530NL	文件：173.15 Kbytes Page：10 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt	IRF International Rectifier	IRF
IRF9530NL	文件：273.47 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤200m?(@VGS=-10V;ID=-8.4A) ?Advancedtrenchprocesstechnology ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Fastswitchingapplication.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF9530NL	文件：1.20027 Mbytes Page：10 Pages	AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF9530NLPBF	文件：758.16 Kbytes Page：10 Pages	AdvancedProcessTechnologySurfaceMount VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt	IRF International Rectifier	IRF

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詳細參數(shù)

型號：
IMIC9530CY
制造商：
Cypress Semiconductor
功能描述：
Clock Generator 48-Pin SSOP

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市賽爾通科技有限公司	IMIC9530CY	CYPRESS	23+		65480		詢價
萬三科技(深圳)有限公司	IMIC9530CY	芯科	22+	NA	500000	萬三科技,秉承原裝,購芯無憂	詢價
深圳市一線半導體有限公司	IMIC9531CT	IMI	24+	TSSOP	41		詢價
深圳市佳鑫美電子科技有限公司	IMIC9531CT	W	22+	SMD	3200	絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!	詢價
深圳市博浩通科技有限公司	IMIC9531CT	進口原裝	23+	TSSOP28	1186	全新原裝現(xiàn)貨	詢價
深圳市華來深電子有限公司	IMIC9531CT	CY	23+	SSOP-28	8560	受權代理!全新原裝現(xiàn)貨特價熱賣!	詢價
深圳市納艾斯科技有限公司	IMIC9531CT	CY	2020+	SSOP-28	80000	只做自己庫存,全新原裝進口正品假一賠百,可開13%增	詢價
深圳市維爾達電子有限公司	IMIC9531CT	IMI	2023+	TSSOP	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市澳億芯電子科技有限公司	IMIC9531CT	CY	1709+	TSSOP-28	35000	普通	詢價
深圳市鼎欣微電子有限公司	IMIC9531CT	IMI	21+	TSSOP28	10000	只做正品原裝現(xiàn)貨	詢價

更多IMIC9530CY供應商更新時間2024-10-27 14:10:00

詳細參數(shù)

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