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IRFE9210

SimpleDriveRequirements

IRF

International Rectifier

IRFF9210

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9210

SimpleDriveRequirements

IRF

International Rectifier

IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    CS9210-VNG

  • 制造商：

    NSC

  • 制造商全稱：

    National Semiconductor

  • 功能描述：

    Geode⑩ CS9210 Graphics Companion DSTN Controller

供應商型號品牌批號封裝庫存備注價格
NS/國半
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NSC
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
NSC
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
NGEODE
00/01+
QFP144
32
全新原裝100真實現(xiàn)貨供應
 詢價
NS
2020+
O-NEWQ
119
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
NATIONAL
24+/25+
128
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
NGEODE
25+
QFP144
415
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
國半
23+
TQFP
7000
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
 詢價
24+
QFP
1
詢價
NSC
24+
TQFP-144
2645
100%全新原裝公司現(xiàn)貨供應!隨時可發(fā)貨
 詢價
更多CS9210-VNG供應商 更新時間2025-5-29 11:09:00

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