首頁 >CED6601A>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

CED6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

CEM6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.3A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6601

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

CEU6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM6601JPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHENMKOchenmko

力勤股份有限公司

CJL6601

P-channelandN-channelComplementaryMOSFETS

ZPSEMI

ZP Semiconductor

CJQ6601

N-channelandP-channelComplementaryMOSFETS

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

DMG6601LVT

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMG6601LVT

NandP-ChannelEnhancementModePowerMOSFET

ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

E6601A

CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

EFC6601R

Lithium-ionbatterycharginganddischargingswitch

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

SANYOSanyo Semicon Device

三洋三洋電機株式會社

EFC6601R

N-ChannelPowerMOSFET

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應商型號品牌批號封裝庫存備注價格
VBsemi
24+
TO-251
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
CET
19+
TO-251
67713
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
VBsemi
2020+
TO-251
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
CET/華瑞
21+
TO-251
30000
只做正品原裝現(xiàn)貨
詢價
CET
2021+
TO-251
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
VBsemi/臺灣微碧
21+
TO-251
10058
原裝現(xiàn)貨假一賠十
詢價
CET/華瑞
23+
TO-251
10000
公司只做原裝正品
詢價
CET/華瑞
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VBsemi
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
C
TO-251
22+
6000
十年配單,只做原裝
詢價
更多CED6601A供應商 更新時間2025-1-1 10:20:00