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C0603C103J5RACAUTO

SMD Auto X7R, Ceramic, 0.01 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Automotive Grade, 0603

KEMETKEMET Corporation

基美基美公司

C0603C103J5RACAUTO

包裝:散裝 封裝/外殼:0603(1608 公制) 類(lèi)別:電容器 陶瓷電容器 描述:CAP CER 10000PF 50V X7R 0603

KEMETKEMET Corporation

基美基美公司

C0603C103J5RACAUTO

包裝:散裝 封裝/外殼:0603(1608 公制) 類(lèi)別:電容器 陶瓷電容器 描述:CAP CER 10000PF 50V X7R 0603

KEMETKEMET Corporation

基美基美公司

C0603C103J5GAC

SurfaceMountCeramicChipCapacitors??Ultra-HighCapacitance,C0GDielectric

KEMETKEMET Corporation

基美基美公司

C0603C103J5GAC

CERAMICCHIP/STANDARD

KEMETKEMET Corporation

基美基美公司

C0603C103J5JACTU

Ceramic,Commercial-(CxxxxC),0.01uF,5,50V,0603,U2J,SMD,MLCC,Ultra-Stable,LowLoss,ClassI

KEMETKEMET Corporation

基美基美公司

C0603C103J5R

RFLDMOSWidebandIntegratedPowerAmplifiers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

CERAMICCHIP/STANDARD

KEMETKEMET Corporation

基美基美公司

C0603C103J5RAC

InGaPHBTLinearAmplifier

1Generaldescription TheMMZ25333Bisaversatile3?stagepoweramplifiertargetedatdriverandpre?driverapplicationsformacroandmicrobase stationsandfinal?stageapplicationsforsmallcells.Itsversatiledesignallowsoperationinanyfrequencybandfrom1500to 2700MHzprovidingg

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

RFPowerFieldEffectTransistors

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

0--6000MHz,15.5dB20.5dBmInGaPHBTGPA TheMMG3015NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0t

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3003NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurpose

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

GalliumArsenideCATVIntegratedAmplifierModule

Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0--6000MHz,18.5dB15dBmInGaPHBTGPA TheMMG3008NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

0-6000MHz,19dB18.5dBmInGaPHBTGPA TheMMG3012NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0--6000MHz,19dB16dBmInGaPHBTGPA TheMMG3007NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0-6000MHz,15dB17dBmInGaPHBT TheMMG3010NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000MH

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3005NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    C0603C103J5RACAUTO

  • 制造商:

    KEMET

  • 類(lèi)別:

    電容器 > 陶瓷電容器

  • 系列:

    SMD Auto X7R

  • 包裝:

    散裝

  • 容差:

    ±5%

  • 電壓 - 額定:

    50V

  • 溫度系數(shù):

    X7R

  • 工作溫度:

    -55°C ~ 125°C

  • 等級(jí):

    AEC-Q200

  • 應(yīng)用:

    汽車(chē),旁通,去耦

  • 安裝類(lèi)型:

    表面貼裝,MLCC

  • 封裝/外殼:

    0603(1608 公制)

  • 大小 / 尺寸:

    0.063" 長(zhǎng) x 0.031" 寬(1.60mm x 0.80mm)

  • 厚度(最大值):

    0.034"(0.87mm)

  • 描述:

    CAP CER 10000PF 50V X7R 0603

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KEMET
20+
電容器
19926
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KEMET(基美)
23+
0603
7350
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KEMET
24+
con
10000
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KEM
24+
32000
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原廠
16+
原廠封裝
10000
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KEMET
2715
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KEMET
23+
NA
3668
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KEMET
2022+
3581
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KEMET
2021+
C0603
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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KEMET
21+
SMD
4000
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更多C0603C103J5RACAUTO供應(yīng)商 更新時(shí)間2021-9-14 10:50:00